Inchange Semiconductor Product Specification 2SC2922 Silicon NPN Power Transistors DESCRIPTION ・With MT-200 package ・Complement to type 2SA1216 APPLICATIONS ・Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol VALUE R O T UC UNIT 180 V 180 V 5 V Collector current 17 A IB Base current 5 A PC Collector power dissipation 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Absolute maximum ratings(Ta=25℃) 体 导 半 SYMBOL VCBO VCEO VEBO IC PARAMETER 固电 CONDITIONS D N O IC Collector-base voltage Open emitter Collector-emitter voltage Open base INC EM S E G N A H Emitter-base voltage Open collector TC=25℃ Inchange Semiconductor Product Specification 2SC2922 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=8A IB=0.8A 2.0 V ICBO Collector cut-off current VCB=180V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=8A ; VCE=4V Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF fT Transition frequency IC=2A ; VCE=12V 50 MHz ts 固电 tf 体 导 半 Turn-on time EM S E NG Storage time CHA Fall time IN hFE classifications O Y P 30-60 50-100 70-140 G 90-180 2 UNIT V 30 R O T UC D N O IC IC=10A;RL=4Ω IB1=- IB2=1A VCC=40V MAX 180 Switching times ton TYP. 0.20 μs 1.30 μs 0.45 μs Inchange Semiconductor Product Specification 2SC2922 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 outline dimensions 3 R O T UC Inchange Semiconductor Product Specification 2SC2922 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC