Inchange Semiconductor Product Specification 2SA980/981/982 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SC2260/2261/2262 APPLICATIONS ·For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2SA980 VCBO VCEO Collector-base voltage Collector-emitter voltage 2SA981 Open emitter Emitter-base voltage -120 2SA982 -140 2SA980 -100 2SA981 UNIT -100 Open base 2SA982 VEBO VALUE -120 V V -140 Open collector -6 V IC Collector current -8 A IB Base current -3 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA980/981/982 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA980 V(BR)CEO Collector-emitter breakdown voltage 2SA981 ICBO IC=-50mA ;IB=0 IC=-3A; IB=-0.3A 2SA980 VCB=-100V; IE=0 2SA981 VCB=-120V; IE=0 2SA982 VCB=-140V; IE=0 IEBO Emitter cut-off current VEB=-6V; IC=0 hFE DC current gain IC=-3A ; VCE=-4V Transition frequency IC=-0.5A ; VCE=-12V fT MAX UNIT V -120 -140 Collector-emitter saturation voltage Collector cut-off current TYP. -100 2SA982 VCEsat MIN -1.5 V -0.1 mA -0.1 mA 30 20 MHz 0.85 μs 2.0 μs 0.3 μs Switching times tr Rise time ts Storage time tf Fall time IC=-3A;RL=4Ω IB1=-0.2A; IB2=0.1A VCC=-12V 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA980/981/982 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3