SAVANTIC 2SA771

SavantIC Semiconductor
Product Specification
2SA770 2SA771
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1985/1986
·Low collector saturation voltage
APPLICATIONS
·For general and industrial
purpose applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SA770
VCBO
Collector-base voltage
-60
Open base
2SA771
VEBO
Emitter-base voltage
V
-80
2SA770
Collector-emitter voltage
UNIT
-60
Open emitter
2SA771
VCEO
VALUE
V
-80
Open collector
-6
V
IC
Collector current
-6
A
IB
Base current
-3
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SA770 2SA771
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
ICBO
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
2SA770
MAX
2SA771
2SA770
2SA771
UNIT
-60
V
-80
IC=-3A; IB=-0.3A
-1.0
V
-1.0
mA
-1.0
mA
VCB=-60V; IE=0
VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-1A ; VCE=-4V
Transition frequency
IC=-0.5A ; VCE=-12V
fT
TYP.
IC=-25mA ,IB=0
Collector-emitter saturation voltage
Collector
cut-off current
MIN
40
10
MHz
0.9
µs
1.0
µs
0.1
µs
Switching times
tr
tstg
tf
Rise time
Storage time
IC=-3A ; VCC=-9V
IB1=-IB2=-0.4A;RL=3C
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA770 2SA771
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3