Inchange Semiconductor Product Specification 2SA1470 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SC3747 ·Low saturation voltage ·Fast switching time APPLICATIONS ·Inductance,lamp drivers ·Inverters ,converters ·Power amplification ·High-speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A ICM Collector current-peak -10 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA1470 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞ -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V Collector-emitter saturation voltage IC=-3.5A IB=-0.175A -0.4 V ICBO Collector cut-off current VCB=-40V IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-2V Transition frequency IC=-1A ; VCE=-5V VCEsat fT CONDITIONS MIN TYP. 70 MAX UNIT 280 100 MHz 0.1 μs 0.5 μs 0.1 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=-3.0A;IB1=-IB2=-0.15A VCC=20V ,RL=6.67Ω hFE Classifications Q R S 70-140 100-200 140-280 2 Inchange Semiconductor Product Specification 2SA1470 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA1470 Silicon PNP Power Transistors 4