ISC 2SA1387

Inchange Semiconductor
Product Specification
2SA1387
Silicon PNP Power Transistors
·
DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage
·High speed switching time
·High DC current gain
APPLICATIONS
·High current switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-5
A
IB
Base current
-1
A
PC
Collector power dissipation
B
Ta=25℃
2
W
TC=25℃
20
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SA1387
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-3A ;IB=-0.075A
-0.15
-0.4
V
VBEsat
Base-emitter saturation voltage
IC=-3A ; IB=-0.075A
-0.8
-1.2
V
ICBO
Collector cut-off current
VCB=-50V; IE=0
-1
μA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-1
μA
hFE-1
DC current gain
IC=-1A ; VCE=-1V
150
hFE-2
DC current gain
IC=-3A ; VCE=-1V
70
Trainsition frequency
IC=-1A ; VCE=-4V
80
MHz
Collector output capacitance
IE=0; VCE=-10V;f=1MHz
200
pF
0.2
μs
1.0
μs
0.2
μs
fT
Cob
CONDITIONS
MIN
TYP.
MAX
-50
B
UNIT
V
400
Switching times
Ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=-IB2=-0.075A
VCC≈-30V;RL=10Ω
2
Inchange Semiconductor
Product Specification
2SA1387
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Inchange Semiconductor
Product Specification
2SA1387
Silicon PNP Power Transistors
4