isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA740 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC1448 APPLICATIONS ·Power amplifier applications. ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IE Emitter Current-Continuous 1.5 A Total Power Dissipation @ Ta=25℃ 1.5 Total Power Dissipation @ TC=25℃ 25 Junction Temperature 150 ℃ -55~150 ℃ PC TJ Tstg Storage Temperature Range isc Website：www.iscsemi.cn W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA740 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0 -150 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.5 V VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -10V -1.0 V ICBO Collector Cutoff Current VCB= -100V ; IE= 0 -20 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE DC Current Gain IC= -0.5A ; VCE= -10V COB Output Capacitance IE= -0; VCB= -10V; ftest= 1MHz 90 pF Current-Gain—Bandwidth Product IC= -0.5A;VCE= -10V 8 MHz fT isc Website：www.iscsemi.cn CONDITIONS MIN TYP. B 2 40 MAX UNIT 140