isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1437 DESCRIPTION ·Collector-Emitter Breakdown Voltage :V(BR)CEO= 60V(Min) ·Complement to Type 2SB1033 ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1437 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.5 V ICBO Collector Cutoff Current VCB= 60V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 1A ; VCE= 5V Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 5V 8 MHz Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 90 pF fT COB CONDITIONS E F 60-120 100-200 160-320 isc Website：www.iscsemi.cn TYP. B B hFE Classifications D MIN 2 60 MAX UNIT 320