isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min) ·High DC Current Gain: hFE= 5000(Min)@IC= -6A ·Complement to Type 2SD2384 APPLICATIONS ·Designed for power amplifier applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w -140 V -140 V -5 V -7 A IC Collector Current-Continuous IB Base Current-Continuous -0.1 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SB1555 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1555 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -6mA -2.5 V VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -5V -3.0 V ICBO Collector Cutoff Current VCB= -140V ; IE=0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -5 μA hFE-1 DC Current Gain IC= -6A ; VCE= -5V hFE-2 DC Current Gain COB Output Capacitance fT CONDITIONS TYP. n c . i m e s c s i . w w w Current-Gain—Bandwidth Product MAX -140 UNIT V B IC= -10A ; VCE= -5V 5000 30000 2000 IE=0 ; VCB= -10V;ftest= 1.0MHz 120 pF IC=-1A ; VCE= -5V 30 MHz hFE-1 Classifications A B C 5000-12000 9000-18000 15000-30000 isc Website：www.iscsemi.cn MIN 2