Inchange Semiconductor Product Specification 2SA757 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SC897 APPLICATIONS ·For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -7 A ICM Collector current-peak -12 A PC Collector power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA757 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=∞ -100 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ,IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ,IC=0 -5 V Collector-emitter saturation voltage IC=-5A; IB=-1A -1.8 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-30V; IE=0 -1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 25 hFE-2 DC current gain IC=-5A ; VCE=-5V 20 Transition frequency IC=-1A ; VCE=-5V VCEsat fT CONDITIONS hFE-1 Classifications A B C 25-60 50-120 100-200 2 MIN TYP. MAX UNIT 200 24 MHz Inchange Semiconductor Product Specification 2SA757 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3