Inchange Semiconductor Product Specification 2SC1079 2SC1080 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SA679/680 ・High power dissipation APPLICATIONS ・For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 Absolute maximum ratings(Ta=℃) SYMBOL 固 VCBO PARAMETER CONDITIONS 2SC1079 Open emitter 2SC1080 ANG VEBO INCH IC VCEO Collector-emitter voltage Emitter-base voltage C U D ON IC M E ES Collector-base voltage 2SC1079 TOR VALUE 120 V 100 120 Open base 2SC1080 UNIT V 100 Open collector 5 V Collector current 12 A IE Emitter current -12 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1079 2SC1080 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC1079 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT 120 IC=0.1A ;IB=0 V 2SC1080 V(BR)EBO MIN 100 Emitter-base breakdown voltage IE=10mA ;IC=0 Collector-emitter saturation voltage IC=10A; IB=1A 3.0 V VBE Base-emitter on voltage IC=10A ; VCE=5V 2.5 V ICBO Collector cut-off current VCB=50V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain VCEsat hFE-2 固 fT 导体 半 电 DC current gain R 40-80 IC=2A ; VCE=5V IC=2A ; VCE=5V N A H INC Y 70-140 2 V 40 140 R O T UC D N O IC IC=7A ; VCE=5V M E S GE Transition frequency hFE-1 Classifications 5 15 4 MHz Inchange Semiconductor Product Specification 2SC1079 2SC1080 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3