ISC 2SC1079

Inchange Semiconductor
Product Specification
2SC1079 2SC1080
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2SA679/680
・High power dissipation
APPLICATIONS
・For audio power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
导体
半
电
Absolute maximum ratings(Ta=℃)
SYMBOL
固
VCBO
PARAMETER
CONDITIONS
2SC1079
Open emitter
2SC1080
ANG
VEBO
INCH
IC
VCEO
Collector-emitter voltage
Emitter-base voltage
C
U
D
ON
IC
M
E
ES
Collector-base voltage
2SC1079
TOR
VALUE
120
V
100
120
Open base
2SC1080
UNIT
V
100
Open collector
5
V
Collector current
12
A
IE
Emitter current
-12
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1079 2SC1080
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SC1079
V(BR)CEO
Collector-emitter
breakdown voltage
TYP.
MAX
UNIT
120
IC=0.1A ;IB=0
V
2SC1080
V(BR)EBO
MIN
100
Emitter-base breakdown voltage
IE=10mA ;IC=0
Collector-emitter saturation voltage
IC=10A; IB=1A
3.0
V
VBE
Base-emitter on voltage
IC=10A ; VCE=5V
2.5
V
ICBO
Collector cut-off current
VCB=50V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
DC current gain
VCEsat
hFE-2
固
fT
‹
导体
半
电
DC current gain
R
40-80
IC=2A ; VCE=5V
IC=2A ; VCE=5V
N
A
H
INC
Y
70-140
2
V
40
140
R
O
T
UC
D
N
O
IC
IC=7A ; VCE=5V
M
E
S
GE
Transition frequency
hFE-1 Classifications
5
15
4
MHz
Inchange Semiconductor
Product Specification
2SC1079 2SC1080
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3