Inchange Semiconductor Product Specification 2SA1125 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC2633 ·High breakdown voltage APPLICATIONS ·For audio frequency high voltage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -50 mA ICM Collector current-peak -100 mA PC Collector power dissipation 1.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1125 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-0.1mA ,IB=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-10μA ,IC=0 -5 V Collector-emitter saturation voltage IC=-30mA; IB=-3mA ICBO Collector cut-off current IEBO VCEsat CONDITIONS B MIN TYP. MAX UNIT -1.0 V VCB=-100V; IE=0 -1 μA Emitter cut-off current VEB=-4V; IC=0 -1 μA hFE DC current gain IC=-10mA ; VCE=-5V COB Output capacitance IE=0 ; VCB=-10V;f=1MHz fT Transition frequency IC=-10mA ; VCE=-10V hFE Classifications Q R S T 90-155 130-220 185-330 260-450 2 90 450 5 200 pF MHz Inchange Semiconductor Product Specification 2SA1125 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3