Inchange Semiconductor Product Specification 2SB1508 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PML package ・Low collector saturation voltage ・Complement to type 2SD2281 ・Wide area of safe operation APPLICATIONS ・For use in relay drivers ,high-speed Inverters,converters PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -12 A ICM Collector current-peak -25 A PC Collector power dissipation Ta=25℃ 3.0 TC=25℃ 45 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1508 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞ -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V Collector-emitter saturation voltage IC=-6A ;IB=-0.3A -0.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE-1 DC current gain IC=-1A ; VCE=-2V 70 hFE-2 DC current gain IC=-5A ; VCE=-2V 30 Transition frequency IC=-1A ; VCE=-5V VCEsat fT CONDITIONS MIN TYP. MAX UNIT 280 10 MHz 0.2 μs 0.4 μs 0.1 μs Switching times ton Turn-on time tstg Storage time tf IC=-5A; IB1=-IB2=-0.5A RL=4Ω;VCC≈20V Fall time hFE-1 Classifications Q R S 70-140 100-200 140-280 2 Inchange Semiconductor Product Specification 2SB1508 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SB1508 Silicon PNP Power Transistors 4