isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB980 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w -120 V -120 V -5 V IC Collector Current-Continuous -6 A ICP Collector Current-Pulse -10 A Collector Power Dissipation @ TC=25℃ 70 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 3 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB980 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -2.0 V VBE(on) Base -Emitter On Voltage IC= -4A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain fT COB CONDITIONS TYP. B 20 n c . i m e s c s i . w IC= -4A; VCE= -5V w w MIN 60 200 20 Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5 V; f= 1MHz 20 MHz Output Capacitance IE= 0; VCB= -10V; f= 1MHz 150 pF hFE-2Classifications Q S P 60-120 80-160 100-200 isc Website：www.iscsemi.cn 2