ISC 2SB980

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SB980
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power amplifications.
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ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE
UNIT
s
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w
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-120
V
-120
V
-5
V
IC
Collector Current-Continuous
-6
A
ICP
Collector Current-Pulse
-10
A
Collector Power Dissipation
@ TC=25℃
70
PC
W
Collector Power Dissipation
@ Ta=25℃
TJ
Tstg
Junction Temperature
Storage Temperature Range
isc Website:www.iscsemi.cn
3
150
℃
-55~150
℃
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SB980
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -4A; IB= -0.4A
-2.0
V
VBE(on)
Base -Emitter On Voltage
IC= -4A; VCE= -5V
-1.8
V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
-50
μA
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
-50
μA
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
fT
COB
‹
CONDITIONS
TYP.
B
20
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s
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w
IC= -4A; VCE= -5V
w
w
MIN
60
200
20
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5 V; f= 1MHz
20
MHz
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
150
pF
hFE-2Classifications
Q
S
P
60-120
80-160
100-200
isc Website:www.iscsemi.cn
2