isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD2250 APPLICATIONS ·Designed for power amplifier applications ·Optimum for 80W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s i . w w w VALUE UNIT -160 V -140 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -12 A Collector Power Dissipation @ TC=25℃ 90 PC TJ Tstg n c . i m e W Collector Power Dissipation @ Ta=25℃ 3.5 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn 2SB1490 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1490 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -6mA -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -6mA -3.0 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -100 μA ICEO Collector Cutoff Current VCE= -140V; IB= 0 -100 μA IEBO Emitter Cutoff Current -100 μA hFE-1 DC Current Gain hFE-2 DC Current Gain fT Turn-on Time tstg Storage Time n c . i m e s c is IC= -1A; VCE= -5V 2000 IC= -6A; VCE= -5V 5000 IC= -0.5A; VCE= -10V IC= -6A; IB1= -IB2= -6mA, VCC= -50V hFE-2 Classifications Q P 5000-15000 8000-30000 isc Website：www.iscsemi.cn 2 MAX -140 UNIT V B Fall Time tf TYP. B w. w w ton MIN VEB= -5V; IC= 0 Current-Gain—Bandwidth Product Switching Times CONDITIONS 30000 20 MHz 1.0 μs 1.5 μs 1.2 μs