isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= -3A ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD1309 APPLICATIONS ·Designed for audio frequency power amplifier and low-speed switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT -150 V -100 V -7 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB Base Current-DC -0.8 A B Collector Power Dissipation TC=25℃ PC Tj Tstg 40 W Collector Power Dissipation Ta=25℃ 1.5 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn 2SB975 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB975 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) MAX UNIT IC= -3A, IB= -3mA -1.5 V Base-Emitter Saturation Voltage IC= -3A, IB= -3mA -2.0 V ICBO Collector Cutoff Current VCB= -100V, IE= 0 -1.0 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -5 mA hFE-1 DC Current Gain IC= -3A; VCE= -2V hFE-2 DC Current Gain IC= -5A; VCE= -2V Turn-on Time tstg Storage Time Fall Time tf B ww hFE-1 Classifications M L K 2000-5000 3000-7000 5000-15000 isc Website：www.iscsemi.cn 2000 15000 n c . i m e s c s .i w TYP. B Switching times ton MIN RL= 16.7Ω, VCC≈ -50V IC= -3A; IB1= -IB2= -3mA 500 0.5 μs 1.0 μs 1.0 μs