isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1507 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2280 APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s .i VALUE ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO UNIT -60 V -50 V Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -20 A w Collector Power Dissipation @ Ta=25℃ 3 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1507 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1m A; IE= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1m A; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -0.4 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -100 μA hFE-1 DC Current Gain hFE-2 DC Current Gain fT w w ton Turn-on Time tstg Storage Time n c . i m e IC= -1A; VCE= -2V 70 IC= -5A; VCE= -2V 30 IC= -1A; VCE= -5V IC= -2A; RL= 10Ω, IB1= -IB2= -0.2A, VCC= -20V Fall Time hFE-1 Classifications Q R S 70-140 100-200 140-280 isc Website：www.iscsemi.cn MIN TYP. B s c s i . w Current-Gain—Bandwidth Product Switching Times tf CONDITIONS 2 MAX UNIT 280 10 MHz 0.2 μs 0.7 μs 0.1 μs