isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3743 · DESCRIPTION ·Collector-Emiiter Breakdown Voltage: V(BR)CEO= 800V(Min.) ·Wide Area of Safe Operation ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current-Continuous 1 A Collector Power Dissipation @Ta=25℃ 2 B PC Tj Tstg W Collector Power Dissipation @TC=25℃ 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3743 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 1.2 V ICBO Collector Cutoff Current VCB= 900V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 50 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 6 hFE-2 DC Current Gain IC= 0.8A; VCE= 5V 6 1.0 μs 4.0 μs 1.0 μs 800 UNIT V Switching Times ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 0.8A; IB1= 0.16A;IB2= -0.32A; VCC= 250V