isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3552 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 12 A ICM Collector Current-Peak 30 A IB Base Current- Continuous 6 A PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3552 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage V(BR)CBO MIN TYP. MAX UNIT 800 V IE= 1mA; IC= 0 7 V Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 10 μA hFE-1 DC Current Gain IC= 0.8A ; VCE= 5V 10 hFE-2 DC Current Gain IC= 4A ; VCE= 5V 8 COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0MHz 215 pF Current-Gain—Bandwidth Product IC= 0.8A ; VCE= 10V 15 MHz fT B B 40 Switching Times ton Turn-on Time tstg Storage Time tf IC= 8A , IB1= 1.6A; IB2= -3.2A RL= 500Ω; VCC=400V Fall Time hFE-1 Classifications K L M 10-20 15-30 20-40 isc Website：www.iscsemi.cn 2 0.5 μs 3.0 μs 0.3 μs