isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB775 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -85V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD895 APPLICATIONS ·Designed for 35W audio frequency output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s i . w w w VALUE UNIT -100 V -85 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICP Collector Current-Pulse -10 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -40~150 ℃ Tstg n c . i m e Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB775 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; RBE=∞ -85 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -2.0 V VBE(on) Base -Emitter On Voltage IC= -1A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -40V; IE=0 -100 μA IEBO Emitter Cutoff Current -100 μA hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance fT CONDITIONS m e s isc w. Current-Gain—Bandwidth Product TYP. B VEB= -4V; IC=0 w w MIN IC= -1A; VCE= -5V IC= -3A; VCE= -5V n c . i 60 MAX UNIT 200 20 VCB= -10V; ftest= 1.0MHz 160 pF IC=-1A; VCE= -5V 18 MHz 0.12 μs 1.29 μs 0.36 μs Switching times ton Turn-on Time tstg Storage Time tf IC= -1A ,RL= 20Ω, IB1= -IB2= -0.1A,VCC=-20V Fall Time hFE-1 Classifications D E 60-120 100-200 isc Website：www.iscsemi.cn 2