isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1476 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Peak 1 A Collector Power Dissipation @ TC=25℃ 35 B PC TJ Tstg W Collector Power Dissipation @ Ta=25℃ 1.4 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1476 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 4V 1.2 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA hFE-1 DC Current Gain IC= 1A; VCE= 4V 40 hFE-2 DC Current Gain IC= 3A; VCE= 4V 20 Current-Gain—Bandwidth Product IC= 0.2A; VCE= 12V fT CONDITIONS MIN TYP. MAX 60 UNIT V B 320 50 MHz Switching times ton Turn-on Time tstg Storage Time tf IC= 4A; IB1= -IB2= 0.4A Fall Time hFE-1 classifications R Q P O 40-90 70-150 120-250 160-320 isc Website：www.iscsemi.cn 2 0.35 μs 1.0 μs 0.3 μs