ISC 2SB566A

Inchange Semiconductor
Product Specification
2SB566 2SB566A
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SD476/476A
APPLICATIONS
・For low frequency power amplifier
power switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
导体
半
电
R
O
T
UC
Absolute maximum ratings(Tc=25℃)
固
SYMBOL
VCBO
VCEO
VEBO
D
N
O
IC
PARAMETER
Collector-base voltage
Open emitter
M
E
S
GE
N
A
H
INC
Collector-emitter voltage
CONDITIONS
Emitter-base voltage
2SB566
VALUE
UNIT
-70
V
-50
Open base
2SB566A
Open collector
V
-60
-5
V
IC
Collector current
-4
A
ICM
Collector current-peak
-8
A
PC
Collectorl power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB566 2SB566A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO
Collector-base breakdown voltage
V(BR)CEO
Collector-emitter
breakdown voltage
V(BR)EBO
IC=-10μA ; IE=0
MIN
TYP.
MAX
2SB566
-70
UNIT
V
-50
IC=-50mA; RBE=∞
V
-60
2SB566A
Emitter-base breakdown votage
IE=-10μA; IC=0
VCEsat
Collector-emitter saturation voltage
IC=-2 A;IB=-0.2 A
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-2 A;IB=-0.2 A
-1.2
V
ICBO
Collector cut-off current
VCB=-50V; IE=0
-1
μA
hFE-1
DC current gain
IC=-0.1A ; VCE=-4V
35
hFE-2
DC current gain
IC=-1A ; VCE=-4V
60
fT
导体
半
电
固
Transition frequency
‹
Turn-on time
toff
Turn-off time
tstg
Storage time
IC
M
E
ES
G
N
A
INCH
IC=-0.5A ; VCC=-10.5V
IB1=-IB2=-0.05 A
hFE-2 classifications
B
C
60-120
100-200
2
V
200
TOR
C
U
D
ON
IC=-0.5A ; VCE=-4V
Switching times
ton
-5
15
MHz
0.3
μs
3.0
μs
2.5
μs
Inchange Semiconductor
Product Specification
2SB566 2SB566A
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SB566 2SB566A
Silicon PNP Power Transistors
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
4