Inchange Semiconductor Product Specification 2SB817 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1047 APPLICATIONS ・140V/12A AF 60W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -12 A ICM Collector current-peak -15 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB817 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -140 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ;IE=0 -160 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ;IC=0 -6 V Collector-emitter saturation voltage IC=-5A ;IB=-0.5A VBE Base-emitter on voltage IC=-1A;VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 60 hFE-2 DC current gain IC=-6A ; VCE=-5V 20 Transition frequency IC=-1A ; VCE=-5V 15 MHz Collector output capacitance IE=0;f=1MHz;VCB=10V 300 pF 0.25 μs 1.61 μs 0.53 μs VCEsat fT COB CONDITIONS MIN TYP. MAX -1.1 UNIT V 200 Switching times ton Turn-on time tstg Storage time tf IC=-1.0A IB1=-IB2=-0.1A Fall time hFE-1 Classifications D E 60-120 100-200 2 Inchange Semiconductor Product Specification 2SB817 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SB817 Silicon PNP Power Transistors 4