Inchange Semiconductor Product Specification 2SB743 Silicon PNP Power Transistors · DESCRIPTION ·With TO-126 package ·Low collector saturation voltage ·Excellent hFE linearity APPLICATIONS ·For audio frequency power amplifier and general purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -3 A ICM Collector current-Peak -5 A IB Base current -0.6 A PC Collector power dissipation B Ta=25℃ 1.0 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB743 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -2.0 V VBEsat Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A -2.0 V ICBO Collector cut-off current VCB=-40V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 30 hFE-2 DC current gain IC=-1A ; VCE=-5V 60 Transition frequency IC=-0.1A ; VCE=-5V fT CONDITIONS 2 MIN TYP. MAX -30 UNIT V 320 55 MHz Inchange Semiconductor Product Specification 2SB743 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3