Inchange Semiconductor Product Specification 2SB744 2SB744A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD794/794A ・Excellent hFE linearity APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS IC M E ES Collector-base voltage Open emitter ANG INCH Collector-emitter voltage Emitter-base voltage OND 2SB744 R O T UC VALUE UNIT -70 V -45 Open base 2SB744A V -60 Open collector -5 V IC Collector current (DC) -3 A ICM Collector current-Peak -5 A IB Base current -0.6 A PC Collector power dissipation Ta=25℃ 1 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB744 2SB744A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SB744 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT -45 IC=-10mA; IB=0 2SB744A V -60 VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.5 -2.0 V VBEsat Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.8 -2.0 V ICBO Collector cut-off current VCB=-45V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 30 120 hFE-2 DC current gain IC=-0.5A ; VCE=-5V 60 100 fT COB 导体 半 电 固 Transition frequency IC=-0.1A ; VCE=-5V Collector output capacitance f=1MHz ; VCB=-10V;IE=0 R 60-120 O Y 100-200 160-320 R O T UC D N O IC M E S GE N A H INC hFE-2 Classifications 2 320 45 MHz 60 pF Inchange Semiconductor Product Specification 2SB744 2SB744A Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SB744 2SB744A Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4