ISC 2SD1506

Inchange Semiconductor
Product Specification
2SD1506
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-126 package
·Complement to type 2SB1065
·Low collector saturation voltage
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
50
V
VEBO
Emitter-base voltage
Open collector
5
V
3
A
4.5
A
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
TC=25℃
10
W
Ta=25℃
1.2
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1506
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ,IB=0
50
V
V(BR)CBO
Collector-base breakdown voltage
IC=50μA ,IE=0
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50μA ,IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.2A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.2A
1.5
V
ICBO
Collector cut-off current
VCB=40V; IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1.0
μA
hFE
DC current gain
IC=0.5A ; VCE=3V
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
40
pF
fT
Transition frequency
IC=0.5A ; VCE=5V
90
MHz
‹
CONDITIONS
hFE Classifications
N
P
Q
R
56-120
82-180
120-270
180-390
2
MIN
TYP.
56
MAX
UNIT
390
Inchange Semiconductor
Product Specification
2SD1506
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3