Inchange Semiconductor Product Specification 2SD1506 Silicon NPN Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SB1065 ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 5 V 3 A 4.5 A IC Collector current ICM Collector current-peak PC Collector power dissipation TC=25℃ 10 W Ta=25℃ 1.2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1506 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ,IB=0 50 V V(BR)CBO Collector-base breakdown voltage IC=50μA ,IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=50μA ,IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.2A 1.5 V ICBO Collector cut-off current VCB=40V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 μA hFE DC current gain IC=0.5A ; VCE=3V COB Output capacitance IE=0 ; VCB=10V,f=1MHz 40 pF fT Transition frequency IC=0.5A ; VCE=5V 90 MHz CONDITIONS hFE Classifications N P Q R 56-120 82-180 120-270 180-390 2 MIN TYP. 56 MAX UNIT 390 Inchange Semiconductor Product Specification 2SD1506 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3