Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB794 2SB795 DESCRIPTION ・With TO-126 package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SD985 2SD986 APPLICATIONS ・For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 固 SYMBOL VCBO VCEO M E S GE PARAMETER N A H INC Collector-base voltage CONDITIONS 2SB794 2SB795 2SB794 IC UNIT -60 V -80 -60 Open base 2SB795 Emitter-base voltage VALUE Open emitter Collector-emitter voltage VEBO R O T UC D N O IC Absolute maximum ratings(Ta=25℃) V -80 Open collector -8 V Collector current (DC) -1.5 A ICM Collector current-peak -3.0 A PD Total power dissipation Ta=25℃ 1.0 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB794 2SB795 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB794 V(BR)CEO MAX UNIT -60 Collector-emitter breakdown voltage IC=-10mA ;IB=0 V 2SB795 -80 VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA -1.5 V VBEsat Base-emitter saturation voltage IC=-1A ;IB=-1mA -2.0 V -1.0 μA -2.0 mA 2SB794 VCB=-60V; IE=0 Collector cut-off current ICBO 2SB795 VCB=-80V; IE=0 IEBO Emitter cut-off current hFE-1 DC current gain IC=-0.5A ; VCE=-2V DC current gain IC=-1A ; VCE=-2V hFE-2 VEB=-5V; IC=0 体 半导 固电 Switching times Turn-on time tstg Storage time IN OND IC=-1.0A ; IB1=-IB2=-1.0mA VCC=-50V;RL=50Ω Fall time hFE-2 Classifications M L K 2000-5000 4000-10000 8000-30000 2 R O T UC 1000 IC M E ES G N A CH ton tf TYP. 2000 30000 0.5 μs 1.0 μs 1.0 μs Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB794 2SB795 PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3