Inchange Semiconductor Product Specification 2SB1151 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1691 ・Low saturation voltage ・Large current ・High total power dissipation:PT=1.3W ・Large current capability and wide SOA APPLICATIONS ・DC-DC converter ・Driver of solenoid or motor PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER D N O IC R O T UC M E S E VALUE UNIT Open emitter -60 V Collector-emitter voltage Open base -60 V Emitter-base voltage Open collector -7 V G N A INCH Collector-base voltage CONDITIONS IC Collector current (DC) -5 A ICM Collector current-Peak -8 A IB Base current -1 A PD Total power dissipation Ta=25℃ 1.3 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1151 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=-2.0A ;IB=-0.2A -0.3 V Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A -1.2 V ICBO Collector cut-off current VCB=-50V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -10 μA hFE-1 DC current gain IC=-0.1A ; VCE=-1V 60 hFE-2 DC current gain IC=-2A ; VCE=-1V 100 hFE-3 DC current gain IC=-5A ; VCE=-2V 50 导体 半 电 MIN TYP. 400 Switching times ton tstg 固 Turn-on time Storage time tf D N O IC IC=-2A; IB1=-IB2=-0.2A RL=5.0Ω;VCC≈10V M E S GE N A H INC Fall time hFE-2 Classifications M 100-200 L K 160-320 200-400 R O T UC 2 0.15 1.0 μs 0.78 2.5 μs 0.18 1.0 μs Inchange Semiconductor Product Specification 2SB1151 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SB1151 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4