Inchange Semiconductor Product Specification 2SB946 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1271 ・Low saturation voltage ・Good linearity of hFE ・High current APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO PARAMETER Collector-base voltage INCH CONDITIONS IC M E ES ANG Open emitter VALUE UNIT -130 V Open base -80 Open collector -7 V Collector current (DC) -7 A ICM Collector current-Peak -15 A PC Collector power dissipation VEBO IC Collector-emitter voltage OND R O T UC Emitter-base voltage TC=25℃ 40 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB946 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.25A -0.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.25A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-3A ; VCE=-2V 60 导体 半 电 fT Transition frequency 固 Turn-on time ts Storage time tf Fall time N A H INC IC=-3A ;IB1=-0.3A IB2=0.3A hFE-2 Classifications R Q P 60-120 90-180 130-260 2 MAX UNIT V 260 30 MHz 0.5 μs 1.5 μs 0.1 μs R O T UC D N O IC M E S GE TYP. -80 IC=-0.5A ; VCE=-10V Switching times ton MIN Inchange Semiconductor Product Specification 2SB946 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SB946 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4