ISC 2SB946

Inchange Semiconductor
Product Specification
2SB946
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Complement to type 2SD1271
・Low saturation voltage
・Good linearity of hFE
・High current
APPLICATIONS
・For power switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
导体
半
电
固
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
PARAMETER
Collector-base voltage
INCH
CONDITIONS
IC
M
E
ES
ANG
Open emitter
VALUE
UNIT
-130
V
Open base
-80
Open collector
-7
V
Collector current (DC)
-7
A
ICM
Collector current-Peak
-15
A
PC
Collector power dissipation
VEBO
IC
Collector-emitter voltage
OND
R
O
T
UC
Emitter-base voltage
TC=25℃
40
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB946
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA , IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.25A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.25A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
μA
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
45
hFE-2
DC current gain
IC=-3A ; VCE=-2V
60
导体
半
电
fT
Transition frequency
固
Turn-on time
ts
Storage time
tf
Fall time
‹
N
A
H
INC
IC=-3A ;IB1=-0.3A
IB2=0.3A
hFE-2 Classifications
R
Q
P
60-120
90-180
130-260
2
MAX
UNIT
V
260
30
MHz
0.5
μs
1.5
μs
0.1
μs
R
O
T
UC
D
N
O
IC
M
E
S
GE
TYP.
-80
IC=-0.5A ; VCE=-10V
Switching times
ton
MIN
Inchange Semiconductor
Product Specification
2SB946
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Inchange Semiconductor
Product Specification
2SB946
Silicon PNP Power Transistors
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
4