Inchange Semiconductor Product Specification 2SC1034 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High breakdown voltage APPLICATIONS ·For horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector VALUE UNIT 1100 V 13 V 1 A 25 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1034 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=10mA; IE=0 1100 V V(BR)EBO Emitter-base breakdown voltage IE=5mA; IC=0 13 V VCEsat Collector-emitter saturation voltage IC=750mA; IB=75m A 5.0 V VBEsat Base-emitter saturation voltage IC=750mA; IB=75m A 1.4 V VCB=50V;IE=0 0.2 ICBO Collector cut-off current mA VCB=800V;IE=0 5.0 IEBO Emitter cut-off current VEB=8V; IC=0 hFE DC current gain IC=750mA ; VCE=3V fT Transition frequency IE=-0.2A ; VCE=10V 5 MHz Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF 2 4 4 mA 40 Inchange Semiconductor Product Specification 2SC1034 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3