ISC 2SC1826

Inchange Semiconductor
Product Specification
2SC1826
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Collector current :IC=4A
·Collector power dissipation
:PC=30W@TC=25℃
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
4
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1826
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
60
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.3A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=80V;IE=0
100
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
100
μA
hFE
DC current gain
IC=1A ; VCE=4V
Transition frequency
IC=0.5A ; VCE=12V
fT
CONDITIONS
2
MIN
TYP.
40
MAX
UNIT
320
10
MHz
Inchange Semiconductor
Product Specification
2SC1826
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3