ISC 2SA1109

Inchange Semiconductor
Product Specification
2SA1109
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High transition frequency
APPLICATIONS
·For audio frequency amplifier and high
power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-180
V
VCEO
Collector-emitter voltage
Open base
-180
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-10
A
ICM
Collector current-peak
-14
A
PC
Collector power dissipation
200
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA1109
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.0
V
VBE
Base-emitter on voltage
IC=-5A;VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-180V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-2A ; VCE=-5V
50
hFE-2
DC current gain
IC=-5A ; VCE=-5V
30
Transition frequency
IC=-0.5A ; VCE=-5V
fT
CONDITIONS
MIN
TYP.
-180
UNIT
V
B
2
MAX
160
60
MHz
Inchange Semiconductor
Product Specification
2SA1109
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3