Inchange Semiconductor Product Specification 2SA1109 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A ICM Collector current-peak -14 A PC Collector power dissipation 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1109 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V VBE Base-emitter on voltage IC=-5A;VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-180V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 DC current gain IC=-2A ; VCE=-5V 50 hFE-2 DC current gain IC=-5A ; VCE=-5V 30 Transition frequency IC=-0.5A ; VCE=-5V fT CONDITIONS MIN TYP. -180 UNIT V B 2 MAX 160 60 MHz Inchange Semiconductor Product Specification 2SA1109 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3