ISC 2SB600

Inchange Semiconductor
Product Specification
2SB600
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・High power dissipations
・Complement to type 2SD555
APPLICATIONS
・For use in audio and power
amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-200
V
VCEO
Collector-emitter voltage
Open base
-200
V
VEBO
Emitter-base voltage
Open collector
-5
V
-10
A
200
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~200
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB600
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
-200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-10A; IB=-1A
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-10A; IB=-1A
-2.0
V
ICBO
Collector cut-off current
VCB=-200V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE
DC current gain
IC=-2A ; VCE=-5V
20
Transition frequency
IC=-0.5A ; VCE=-10V
4
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
MHz
Inchange Semiconductor
Product Specification
2SB600
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3