Inchange Semiconductor Product Specification 2SC2608 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SA1117 ·High power dissipation APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 6 V 17 A 200 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2608 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCE(sat) Collector-emitter saturation voltage IC=8A; IB=0.8A 2.0 V ICBO Collector cut-off current VCB=200V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=8A ; VCE=4V Transition frequency IC=1A ; VCE=12V fT CONDITIONS 2 MIN TYP. MAX UNIT 20 20 MHz Inchange Semiconductor Product Specification 2SC2608 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3