ISC 2SC2608

Inchange Semiconductor
Product Specification
2SC2608
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type 2SA1117
·High power dissipation
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
6
V
17
A
200
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2608
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
200
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCE(sat)
Collector-emitter saturation voltage
IC=8A; IB=0.8A
2.0
V
ICBO
Collector cut-off current
VCB=200V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=8A ; VCE=4V
Transition frequency
IC=1A ; VCE=12V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
20
20
MHz
Inchange Semiconductor
Product Specification
2SC2608
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3