Inchange Semiconductor Product Specification 2N5732 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3 package ·High current capability APPLICATIONS ·For linear amplifier and inductive switching applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 20 A ICM Collector current-peak 30 A PT Total power dissipation 87.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5732 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=10 A;IB=1 A 1.4 V VCEsat-2 Collector-emitter saturation voltage IC=20 A;IB=4 A 4.0 V VBE Base-emitter on voltage IC=10 A; VCE=4V 2.2 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=5A ; VCE=2V 30 hFE-2 DC current gain IC=20A ; VCE=4V 5 Transition frequency IC=1A ; VCE=10V 30 fT 2 80 UNIT V 300 MHz Inchange Semiconductor Product Specification 2N5732 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3