isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2262 DESCRIPTION ·High Power Dissipation: PC= 80W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min.) ·Complement to Type 2SA982 APPLICATIONS ·Designed for general purpose applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w VALUE UNIT 200 V 140 V 6 V IC Collector Current-Continuous 8 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 80 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2262 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA hFE DC Current Gain IC= 3A; VCE= 4V Current-Gain—Bandwidth Product IE= -0.5A; VCE= 12V fT CONDITIONS isc Website：www.iscsemi.cn TYP. MAX 140 UNIT V B 30 n c . i m e s c s i . w w w MIN 15 MHz