isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4327 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 35V(Min) ·Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max)@ (IC= 5A, IB= 0.3A) ·Complement to Type 2SA1643 B APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A PC Collector Power Dissipation @TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4327 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 35 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.3A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.3A 1.2 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 μA hFE DC Current Gain IC= 5A; VCE= 2V Current-Gain—Bandwidth Product IE= -1A; VCE= 12V fT isc Website：www.iscsemi.cn CONDITIONS MIN TYP. B B 2 MAX UNIT 50 115 MHz