isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA808 DESCRIPTION ·High Power Dissipation: PC= 50W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Current-Continuous -3 A PC Collector Power Dissipation @TC=25℃ 50 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA808 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -1.0 mA hFE DC Current Gain IC= -3A; VCE= -4V Current-Gain—Bandwidth Product IE= 0.5A; VCE= -12V fT CONDITIONS MIN TYP. MAX -80 UNIT V 20 10 MHz 1.2 μs 1.8 μs 0.3 μs Switching times tr tstg tf Rise Time Storage Time Fall Time isc Website：www.iscsemi.cn IC= -3A ,RL= 3Ω, VCC= -10V IB1= -0.3A; IB2= 50mA