isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-Continuous -4 A PC Collector Power Dissipation @ TC=25℃ 160 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2151 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -0.5 V ICBO Collector Cutoff Current VCB= -200V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current Gain IC= -3A ; VCE= -4V COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 450 pF Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 20 MHz fT CONDITIONS P Y 50-100 70-140 90-180 isc Website：www.iscsemi.cn TYP. 2 MAX -200 UNIT V B hFE Classifications O MIN 50 180