ISC 2SC3577

Inchange Semiconductor
Product Specification
2SC3577
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3PFa package
・High breakdown voltage
・High speed
APPLICATIONS
・For high speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
体
导
半
Absolute maximum ratings(Ta=25℃)
固电
SYMBOL
OND
VALUE
UNIT
850
V
650
V
7
V
Collector current
5
A
ICM
Collector current-peak
10
A
IB
Base current
3
A
PC
Collector power dissipation
VCBO
VCEO
VEBO
IC
PARAMETER
R
O
T
UC
CONDITIONS
C
I
M
E
S
E
NG
Collector-base voltage
A
H
C
IN
Open emitter
Collector-emitter voltage
Open base
Emitter-base voltage
Open collector
TC=25℃
80
Ta=25℃
3
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC3577
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.5A;L=50mH
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=0.6A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.6A
1.5
V
ICES
Collector cut-off current
VCB=800V; VBE=0
50
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
50
μA
hFE-1
DC current gain
IC=10mA ; VCE=5V
10
hFE-2
DC current gain
IC=3A ; VCE=5V
6
fT
固电
Switching times
ton
tstg
tf
体
导
半
Transition frequency
Turn-on time
IC=0.5A ; VCE=5V
EM
S
E
NG
A
H
C
IN
Storage time
CONDITIONS
2
TYP.
MAX
650
UNIT
V
R
O
T
UC
D
N
O
IC
IC=3A; VCC=250V
IB1=0.6A;IB2=-1.2A
Fall time
MIN
6
MHz
1.0
μs
2.5
μs
0.5
μs
Inchange Semiconductor
Product Specification
2SC3577
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3