Inchange Semiconductor Product Specification 2SC3577 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High breakdown voltage ・High speed APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL OND VALUE UNIT 850 V 650 V 7 V Collector current 5 A ICM Collector current-peak 10 A IB Base current 3 A PC Collector power dissipation VCBO VCEO VEBO IC PARAMETER R O T UC CONDITIONS C I M E S E NG Collector-base voltage A H C IN Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector TC=25℃ 80 Ta=25℃ 3 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3577 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A;L=50mH VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V ICES Collector cut-off current VCB=800V; VBE=0 50 μA IEBO Emitter cut-off current VEB=7V; IC=0 50 μA hFE-1 DC current gain IC=10mA ; VCE=5V 10 hFE-2 DC current gain IC=3A ; VCE=5V 6 fT 固电 Switching times ton tstg tf 体 导 半 Transition frequency Turn-on time IC=0.5A ; VCE=5V EM S E NG A H C IN Storage time CONDITIONS 2 TYP. MAX 650 UNIT V R O T UC D N O IC IC=3A; VCC=250V IB1=0.6A;IB2=-1.2A Fall time MIN 6 MHz 1.0 μs 2.5 μs 0.5 μs Inchange Semiconductor Product Specification 2SC3577 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3