ISC 2SC2979

Inchange Semiconductor
Product Specification
2SC2979
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・High VCBO
・Fast switching speed.
APPLICATIONS
・For high voltage ,high speed and
high power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
体
导
半
Absolute maximum ratings(Ta=25℃)
固电
SYMBOL
VCBO
VCEO
VEBO
EM
S
E
NG
PARAMETER
D
N
O
IC
R
O
T
UC
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
900
V
Collector-emitter voltage
Open base
800
V
Emitter-base voltage
Open collector
7
V
A
H
C
IN
IC
Collector current
3
A
ICM
Collector current-peak
6
A
IB
Base current
1.5
A
PC
Collector dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2979
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A; RBE=∞,L=100mH
V(BR)EBO
Base-emitter breakdown voltage
IE=10mA ; IC=0
VCEsat
Collector-emitter saturation voltage
IC=0.75A; IB=0.15A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=0.75A; IB=0.15A
1.5
V
ICBO
Collector cut-off current
VCB=750V ;IE=0
100
μA
ICEO
Collector cut-off current
VCE=650V; RBE=∞
100
μA
hFE-1
DC current gain
IC=0.3A ; VCE=5V
hFE-2
DC current gain
IC=1.5A ; VCE=5V
Switching times
ton
tstg
tf
CONDITIONS
体
导
半
固电
EM
S
E
NG
Turn-on time
A
H
C
IN
Storage time
2
TYP.
MAX
UNIT
800
V
7
V
15
R
O
T
UC
D
N
O
IC
VCC≈250V; IC=1.5A
IB1=0.3A;IB2=-0.75A
Fall time
MIN
7
1.0
μs
3.0
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SC2979
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SC2979
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC