Inchange Semiconductor Product Specification 2SC2816 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ・High speed APPLICATIONS ・For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2.5 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2816 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; RBE=∞;L=100mH V(BR)EBO Emitter-base breakdown voltage IE=10mA ; IC=0 VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 50 μA ICEO Collector cut-off current VCE=350V ; RBE=∞ 50 μA hFE-1 DC current gain IC=2.5 A ; VCE=5V 15 hFE-2 DC current gain IC=5 A ; VCE=5V 7 0.5 μs 1.5 μs 0.5 μs 400 V 7 V Switching times ton Turn-on time ts Storage time tf Fall time IC=5A; IB1=-IB2=1A VCC=150V 2 Inchange Semiconductor Product Specification 2SC2816 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC2816 Silicon NPN Power Transistors 4