Inchange Semiconductor Product Specification 2SC3299 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1307 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 体 导 半 Absolute maximum ratings (Tc=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 60 V Collector-emitter voltage Open base 50 V Emitter-base voltage Open collector 5 V A H C IN IC Collector current 5 A IB Base current 1 A PC Collector power dissipation TC=25℃ 20 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3299 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.15A 0.4 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.15A 1.2 V ICBO Collector cut-off current VCB=50V ;IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA hFE-1 DC current gain IC=1A ; VCE=1V 70 hFE-2 DC current gain IC=3A ; VCE=1V 30 Cob Output capacitance IE=0 ; VCB=10V,f=1MHz fT Transition frequency IC=1A ; VCE=4V 体 导 半 Switching times 固电 EM S E G N A H Turn-on time ton CONDITIONS ts Storage time tf INC Fall time O Y 70-140 120-240 2 TYP. MAX 50 UNIT V 240 80 R O T UC D N O IC IC=3A ;IB1=0.15A IB2=-0.15A,VCC=30V RL=10Ω hFE-1 Classifications MIN pF 120 MHz 0.1 μs 1.0 μs 0.1 μs Inchange Semiconductor Product Specification 2SC3299 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 R O T UC Inchange Semiconductor Product Specification 2SC3299 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC