Inchange Semiconductor Product Specification 2SC3506 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High-speed switching ・High collector-base voltage VCBO ・Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ・For high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 体 导 半 固电 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO EM S E G N A H PARAMETER R O T UC D N O IC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1000 V Collector-emitter voltage Open base 800 V Emitter-base voltage Open collector 7 V INC IC Collector current 3 A ICP Collector current-peak 6 A IB Base current 2 A PC Collector power dissipation TC=25℃ 70 W 3 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3506 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=50mH VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A 1.5 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.5 V ICBO Collector cut-off current VCB=1000V; IE=0 50 μA IEBO Emitter cut-off current VEB=7V; IC=0 50 μA hFE DC current gain IC=2A ; VCE=5V Transition frequency IC=0.2A ; VCE=5V;f=1MHz fT CONDITIONS MIN ts tf 体 导 半 Turn-on time 固电 EM S E NG Storage time A H C IN Fall time 2 UNIT V 6 4 MHz R O T UC D N O IC IC=2A; VCC=250V IB1=0.4A ,IB2=-0.8A MAX 800 Switching times ton TYP. 1.0 μs 2.5 μs 0.5 μs Inchange Semiconductor Product Specification 2SC3506 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 R O T UC Inchange Semiconductor Product Specification 2SC3506 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC