Inchange Semiconductor Product Specification 2SC4075 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220F package ·High voltage ·Wide area of safe operation APPLICATIONS ·Color TV chroma output ,sound output and B/W TV video output ,audio output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.2 A ICM Collector current-peak 0.7 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4075 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=10μA; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10μA ; IC=0 7 V Collector-emitter saturation voltage IC=50mA; IB=5m A 2.0 V ICBO Collector cut-off current VCB=200V; IE=0 0.1 μA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 μA hFE DC current gain IC=10mA ; VCE=10V 40 fT Transition frequency IC=10mA ; VCE=30V 50 COB Output capacitance IE=0; VCB=50V;f=1MHz VCEsat CONDITIONS hFE Classifications C D E 40-80 60-120 100-200 2 MIN TYP. MAX UNIT 200 MHz 5.3 pF Inchange Semiconductor Product Specification 2SC4075 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3