Inchange Semiconductor Product Specification 2SD1499 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220Fa package ·High transition frequency ·Complement to type 2SB1063 ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICM Collector current-Peak 8 A PC Collector power dissipation Ta=25℃ 2.0 W TC=25℃ 40 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1499 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 2.0 V VBE Base-emitter on voltage IC=3A ; VCE=5V 1.8 V ICBO Collector cut-off current VCB=100V; IE=0 50 μA IEBO Emitter cut-off current VEB=3V; IC=0 50 μA hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=1A ; VCE=5V 40 hFE-3 DC current gain IC=3A ; VCE=5V 20 Transition frequency IC=0.5A; VCE=5V 20 MHz Collector output capacitance f=1MHz ; VCB=10V 170 pF fT COB CONDITIONS hFE-2 Classifications R Q P 40-80 60-120 100-200 2 MIN TYP. MAX 100 UNIT V 200 Inchange Semiconductor Product Specification 2SD1499 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3