Inchange Semiconductor Product Specification 2SC1755 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High breakdown voltage APPLICATIONS ・For TV chroma,video ,audio output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 半导 Absolute maximum ratings (Ta=25℃) SYMBOL 固电 PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO N A H INC IC ICM Emitter-base voltage Collector current (DC) D N O IC Open emitter M E S GE Open base Open collector Collector current-peak Ta=25℃ PC R O T UC CONDITIONS VALUE UNIT 300 V 300 V 7 V 0.2 A 0.7 A 1.2 Collector power dissipation W TC=25℃ 15 Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ Inchange Semiconductor Product Specification 2SC1755 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA 2.0 V ICBO Collector cut-off current VCB=200V ;IE=0 0.1 μA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 μA hFE DC current gain IC=10mA ; VCE=10V 40 Transition frequency IC=10mA ; VCE=30V 50 Collector output capacitance f=1MHz;VCB=50V fT COB CONDITIONS MIN 导体 半 电 固 40-80 D E 60-120 100-200 M E S GE 2 UNIT V 200 MHz 5.3 R O T UC D N O IC N A H INC MAX 300 hFE classifications C TYP. pF Inchange Semiconductor Product Specification 2SC1755 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC1755 Silicon NPN Power Transistors 4