isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3125 DESCRIPTION ·Good Linearity of fT APPLICATIONS ·Designed for TV Final Picture IF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 50 mA IB Base Current-Continuous 25 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 125 ℃ -55~125 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3125 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 μA hFE DC Current Gain IC= 10mA ; VCE= 10V VCE(sat) Collector-Emitter Saturation Voltage IC= 15mA ; IB= 1.5mA 0.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 15mA ; IB= 1.5mA 1.5 V COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 1.6 pF rbb’ • CC Base Time Constant IC= 1mA ; VCB= 10V; f= 30MHz 25 ps Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V fT isc Website：www.iscsemi.cn CONDITIONS 2 MIN TYP. MAX 25 V 20 200 1.1 250 UNIT 600 MHz INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC3125 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC3125 4