isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2757 DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 125 ℃ -55~125 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2757 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT Collector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA 0.5 V ICBO Collector Cutoff Current VCB= 12V; IE= 0 0.1 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 60 Current-Gain—Bandwidth Product IC= 5mA ; VCE= 10V 800 COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz rbb’ • CC Base Time Constant IC= 5mA ; VCB= 10V;f= 31.9MHz VCE(sat) fT PARAMETER hFE Classifications Marking T32 T33 T34 hFE 60-120 90-180 120-240 isc Website：www.iscsemi.cn 2 240 1100 10 MHz 1.5 pF 15 ps