ISC 2SC4507

Inchange Semiconductor
Product Specification
2SC4507
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・High breakdown voltage
・High speed switching performance
APPLICATIONS
・For switching regulator and general
purpose power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
500
V
Collector-emitter voltage
Open base
400
V
Emitter-base voltage
Open collector
7
V
5
A
40
W
IC
Collector current
PC
Collector dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC4507
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustainig voltage
IC=100mA ; IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.4A
0.8
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.2
V
Collector cut-off current
VCB=450V; IE=0
100
μA
ICBO
IEBO
hFE-1
hFE-2
TOR
体
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Emitter cut-off current
VEB=7V; IC=0
DC current gain
IC=0.5A ; VCE=5V
25
DC current gain
IC=2A ; VCE=5V
20
2
100
65
μA
Inchange Semiconductor
Product Specification
2SC4507
Silicon NPN Power Transistors
PACKAGE OUTLINE
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Fig.2 Outline dimensions
3