isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5196 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Min) @IC= 5A ·Good Linearity of hFE ·Complement to Type 2SA1939 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s .i VALUE w w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO UNIT 80 V 80 V Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous 0.6 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5196 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 80V ; IE= 0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 μA hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain COB Output Capacitance fT CONDITIONS w w IC= 3A ; VCE= 5V O 55-110 80-160 isc Website：www.iscsemi.cn MAX 80 n c . i m e UNIT V 55 160 35 IE= 0; VCB= 10V; ftest= 1.0MHz 75 pF IC= 1A ; VCE= 5V 30 MHz hFE-1 Classifications R TYP. B s c s i . w Current-Gain—Bandwidth Product MIN 2